: | TP65H070G4LSGB-TR |
---|---|
: | Single FETs, MOSFETs |
: | Transphorm |
: | GANFET N-CH 650 |
: | - |
: | Tape & Reel (TR) |
: | 2981 |
: | 1 |
1
$10.7900
$10.7900
10
$9.2500
$92.5000
100
$7.7100
$771.0000
500
$6.8000
$3,400.0000
1000
$6.1200
$6,120.0000
3000
$5.7400
$17,220.0000
TYPE | DESCRIPTION |
Mfr | Transphorm |
Series | SuperGaN® |
Package | Tape & Reel (TR) |
Product Status | ACTIVE |
Package / Case | 8-PowerTDFN |
Mounting Type | Surface Mount |
Operating Temperature | -55°C ~ 150°C (TJ) |
Technology | GaNFET (Gallium Nitride) |
FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
Rds On (Max) @ Id, Vgs | 85mOhm @ 16A, 10V |
Power Dissipation (Max) | 96W (Tc) |
Vgs(th) (Max) @ Id | 4.6V @ 700µA |
Supplier Device Package | 8-PQFN (8x8) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs (Max) | ±20V |
Drain to Source Voltage (Vdss) | 650 V |
Gate Charge (Qg) (Max) @ Vgs | 8.4 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 400 V |