| ： | TP65H070G4LSG-TR |
|---|---|
| ： | Single FETs, MOSFETs |
| ： | Transphorm |
| ： | GANFET N-CH 650 |
| ： | - |
| ： | Tape & Reel (TR) |
| ： | 2686 |
| ： | |
1
$9.6200
$9.6200
10
$8.2400
$82.4000
100
$6.8700
$687.0000
500
$6.0600
$3,030.0000
1000
$5.4500
$5,450.0000
3000
$5.1100
$15,330.0000
| TYPE | DESCRIPTION |
| Mfr | Transphorm |
| Series | SuperGaN® |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 3-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 16A, 10V |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 4.8V @ 700µA |
| Supplier Device Package | 3-PQFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 400 V |
