| ： | TP65H050G4YS |
|---|---|
| ： | Single FETs, MOSFETs |
| ： | Transphorm |
| ： | 650 V 35 A GAN |
| ： | - |
| ： | Tube |
| ： | 402 |
| ： | 1 |
1
$14.3600
$14.3600
10
$12.6500
$126.5000
450
$9.9100
$4,459.5000
| TYPE | DESCRIPTION |
| Mfr | Transphorm |
| Series | SuperGaN® |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 22A, 10V |
| Power Dissipation (Max) | 132W (Tc) |
| Vgs(th) (Max) @ Id | 4.8V @ 700µA |
| Supplier Device Package | TO-247-4L |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 400 V |
