| ： | TP65H035WS |
|---|---|
| ： | Single FETs, MOSFETs |
| ： | Transphorm |
| ： | GANFET N-CH 650 |
| ： | - |
| ： | Tube |
| ： | 302 |
| ： | 1 |
1
$14.0500
$14.0500
30
$12.8100
$384.3000
| TYPE | DESCRIPTION |
| Mfr | Transphorm |
| Series | - |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 46.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 30A, 10V |
| Power Dissipation (Max) | 156W (Tc) |
| Vgs(th) (Max) @ Id | 4.8V @ 1mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 400 V |
