| ： | SSM3J145TU,LXHF |
|---|---|
| ： | Single FETs, MOSFETs |
| ： | Toshiba Electronic Devices and Storage Corporation |
| ： | SMOS P-CH VDSS: |
| ： | - |
| ： | Tape & Reel (TR) |
| ： | 4346 |
| ： | |
1
$0.3500
$0.3500
10
$0.2700
$2.7000
100
$0.1600
$16.0000
500
$0.1500
$75.0000
1000
$0.1000
$100.0000
3000
$0.0900
$270.0000
6000
$0.0900
$540.0000
9000
$0.0800
$720.0000
30000
$0.0800
$2,400.0000
75000
$0.0800
$6,000.0000
| TYPE | DESCRIPTION |
| Mfr | Toshiba Electronic Devices and Storage Corporation |
| Series | U-MOSVI |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 3-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 103mOhm @ 1A, 4.5V |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | UFM |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | +6V, -8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 10 V |
| Qualification | AEC-Q101 |
