| ： | NXH004P120M3F2PTNG |
|---|---|
| ： | FET, MOSFET Arrays |
| ： | Sanyo Semiconductor/onsemi |
| ： | SILICON CARBIDE |
| ： | - |
| ： | Tray |
| ： | 0 |
| ： | 1 |
1
$215.4900
$215.4900
20
$201.8400
$4,036.8000
40
$194.2500
$7,770.0000
| TYPE | DESCRIPTION |
| Mfr | Sanyo Semiconductor/onsemi |
| Series | - |
| Package | Tray |
| Product Status | ACTIVE |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 1.1kW (Tj) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 338A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 16410pF @ 800V |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 200A, 18V |
| Gate Charge (Qg) (Max) @ Vgs | 876nC @ 20V |
| Vgs(th) (Max) @ Id | 4.4V @ 120mA |
| Supplier Device Package | 36-PIM (56.7x62.8) |
