: | IV1D12020T2 |
---|---|
: | Single Diodes |
: | Inventchip Technology |
: | DIODE SIL CARB |
: | - |
: | Tube |
: | 120 |
: | 1 |
1
$17.6000
$17.6000
10
$15.5100
$155.1000
100
$13.4100
$1,341.0000
500
$12.1600
$6,080.0000
TYPE | DESCRIPTION |
Mfr | Inventchip Technology |
Series | - |
Package | Tube |
Product Status | ACTIVE |
Package / Case | TO-247-2 |
Mounting Type | Through Hole |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns |
Technology | SiC (Silicon Carbide) Schottky |
Capacitance @ Vr, F | 1114pF @ 1V, 1MHz |
Current - Average Rectified (Io) | 54A |
Supplier Device Package | TO-247-2 |
Operating Temperature - Junction | -55°C ~ 175°C |
Voltage - DC Reverse (Vr) (Max) | 1200 V |
Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 20 A |
Current - Reverse Leakage @ Vr | 120 µA @ 1200 V |