: | G3K8N15HE |
---|---|
: | Single FETs, MOSFETs |
: | Goford Semiconductor |
: | MOSFET N-CH ESD |
: | - |
: | Tape & Reel (TR) |
: | 5000 |
: | 1 |
2500
$0.1100
$275.0000
15000
$0.1000
$1,500.0000
30000
$0.0900
$2,700.0000
TYPE | DESCRIPTION |
Mfr | Goford Semiconductor |
Series | - |
Package | Tape & Reel (TR) |
Product Status | ACTIVE |
Package / Case | TO-261-4, TO-261AA |
Mounting Type | Surface Mount |
Operating Temperature | -55°C ~ 150°C (TJ) |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
Rds On (Max) @ Id, Vgs | 370mOhm @ 2A, 10V |
Power Dissipation (Max) | 2.16W (Tc) |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Supplier Device Package | SOT-223 |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs (Max) | ±20V |
Drain to Source Voltage (Vdss) | 150 V |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 558 pF @ 75 V |