| ： | CGD65A130S2-T13 |
|---|---|
| ： | Single FETs, MOSFETs |
| ： | Cambridge GaN Devices |
| ： | 650V GAN HEMT, |
| ： | - |
| ： | Tape & Reel (TR) |
| ： | 3352 |
| ： | 1 |
1
$6.2500
$6.2500
10
$5.3600
$53.6000
100
$4.4600
$446.0000
500
$3.9400
$1,970.0000
1000
$3.5500
$3,550.0000
3500
$3.3200
$11,620.0000
| TYPE | DESCRIPTION |
| Mfr | Cambridge GaN Devices |
| Series | ICeGaN™ |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 16-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 182mOhm @ 900mA, 12V |
| FET Feature | Current Sensing |
| Vgs(th) (Max) @ Id | 4.2V @ 4.2mA |
| Supplier Device Package | 16-DFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | +20V, -1V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.3 nC @ 12 V |
