| ： | CGD65A055S2-T07 |
|---|---|
| ： | Single FETs, MOSFETs |
| ： | Cambridge GaN Devices |
| ： | 650V GAN HEMT, |
| ： | - |
| ： | Tape & Reel (TR) |
| ： | 737 |
| ： | 1 |
1
$15.0600
$15.0600
10
$13.2700
$132.7000
100
$11.4700
$1,147.0000
500
$10.4000
$5,200.0000
1000
$9.5400
$9,540.0000
| TYPE | DESCRIPTION |
| Mfr | Cambridge GaN Devices |
| Series | ICeGaN™ |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 16-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 77mOhm @ 2.2A, 12V |
| FET Feature | Current Sensing |
| Vgs(th) (Max) @ Id | 4.2V @ 10mA |
| Supplier Device Package | 16-DFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | +20V, -1V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 12 V |
