| ： | FBG10N05ASH |
|---|---|
| ： | Single FETs, MOSFETs |
| ： | EPC Space |
| ： | GAN FET HEMT 10 |
| ： | - |
| ： | Bulk |
| ： | 49 |
| ： | |
1
$392.7500
$392.7500
10
$377.9900
$3,779.9000
| TYPE | DESCRIPTION |
| Mfr | EPC Space |
| Series | eGaN® |
| Package | Bulk |
| Product Status | ACTIVE |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 5A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 1.2mA |
| Supplier Device Package | 4-SMD |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 233 pF @ 50 V |
