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0755-23612435
FBG04N30BC
  • image of Single FETs, MOSFETs>FBG04N30BC
  • image of Single FETs, MOSFETs>FBG04N30BC
  • image of Single FETs, MOSFETs>FBG04N30BC
  • image of Single FETs, MOSFETs>FBG04N30BC
FBG04N30BC
Single FETs, MOSFETs
EPC Space
GAN FET HEMT 40
-
Bulk
141
: $287.7600
:

1

$287.7600

$287.7600

10

$269.5200

$2,695.2000

image of Single FETs, MOSFETs>FBG04N30BC
image of Single FETs, MOSFETs>FBG04N30BC
image of Single FETs, MOSFETs>FBG04N30BC
FBG04N30BC
FBG04N30BC
Single FETs, MOSFETs
EPC Space
GAN FET HEMT 40
-
Bulk
141
PDF(1)
TYPEDESCRIPTION
MfrEPC Space
SeriesFSMD-B
PackageBulk
Product StatusACTIVE
Package / Case4-SMD, No Lead
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs9mOhm @ 30A, 5V
Vgs(th) (Max) @ Id2.5V @ 9mA
Supplier Device Package4-SMD
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)+6V, -4V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs11.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 20 V
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